capable of 2.5v gate drive lower on-resistance surface mount package absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w w/ t stg t j symbol value unit rthj-a thermal resistance junction-ambient 3 max. 140 /w thermal data parameter storage temperature range total power dissipation 0.75 -55 to 150 operating junction temperature range -55 to 150 linear derating factor 1.3 continuous drain current 3 , v gs @ 4.5v 3.4 pulsed drain current 1,2 15 gate-source voltage 8 continuous drain current 3 , v gs @ 4.5v 4.9 parameter rating drain-source voltage 20 g d s leshan radio company, ltd. sot? 23 (to?236ab) s-ln2312lt1g 20v n-channel enhancement-mode mosfet v ds = 20v r ds(on), vgs@4.5v , ids@ 5.0a = 41m $ r ds(on), vgs@2.5v, ids@4.5a = 47m features advanced trench process technology high density cell design for ultra low on-resistance $ we declare that the material of product compliance with rohs requirements. device marking shipping 3000/tape&reel 10000/tape&reel ln2312lt1g n12 ln2312lt3g ordering information n12 rev .o 1/5 1 2 3 ln2312lt1g s- prefix for automotive and other applications requiring unique site and control change requirements; aec-q101 qualified and ppap capable. s-ln2312lt1g s-ln2312lt3g
electrical characteristics@t j =25 o c(unless otherwise specified) notes: 1.pulse width limited by max. junction temperature. 2.pulse width < 300us , duty cycle < 2%. 3.surface mounted on 1 in 2 copper pcb board leshan radio company, ltd. ln2312lt1g , s-ln2312lt1g parameter symbol test conditio n min typ ma x uni t static drain-source breakdown voltage bv dss v gs = 0v, i d = 250ua 20 - - v drain-source on-state resistance r ds(on) v gs = 1.8v, i d = 4.0a 31 5 7 drain-source on-state resistance r ds(on) v gs = 2.5v, i d = 4.5a 24 4 7 drain-source on-state resistance r ds(on) v gs = 4.5v, i d = 5a 21 4 1 gate threshold voltage v gs(th) v ds =v gs , i d = 250ua 0.4 0.6 1 v zero gate voltage drain current i dss v ds = 20v, v gs = 0v 1 ua gate body leakage i gss v gs = + 8v, v ds = 0v + 100 na gate resistance rg forward transconductance g fs v ds = 10v, i d = 5a 40 s dynamic total gate charge q g 11.2 gate-source charge q gs 1.4 gate-drain charge q gd 2.2 turn-on delay time t d(on) 15 turn-on rise time t r 40 turn-off delay time t d(off) 48 turn-off fall time t f 31 input capacitance c iss 500 output capacitance c oss 300 reverse transfer capacitance c rss 140 source-drain diod e max. diode forward current i s 1.7 a diode forward voltage v sd i s = 1.7a, v gs = 0v 1.2 v v ds = 8v, v gs = 0v f = 1.0 mhz pf nc v dd = 10v, d = 1, v gen = 4.5v r g = 6 ns v ds = 10v, i d = 5a v gs = 4.5v m 25 60 70 45 rev .o 2/5
fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 0 4 8 12 0123 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c v g =1.8v 5.0v 4.5v 3.5v 2.5v 0 4 8 12 0123 v ds , drain-to-source voltage (v) i d , drain current (a) t a = 150 o c 5.0v 4.5v 3.5v 2.5v v g =1.8v 30 40 50 60 70 0246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =3a t a =25 o c 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =4a v g =5v 0.2 0.6 1.0 1.4 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v) 0.0 1.0 2.0 3.0 4.0 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c leshan radio company, ltd. rev .o 3/5 ln2312lt1g , s-ln2312lt1g
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time circuit fig 12. gate charge circuit 0 2 4 6 8 10 12 0246810 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =4a v ds =10v v ds =12v v ds =16v 10 100 1000 1 5 9 13 17 21 25 v ds , drain-to-source voltage (v) c (pf) f =1.0mhz c iss c oss c rss t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 4.5v q gs q gd q g charge 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse p dm duty factor = t/t peak t j = p dm x r thja + t a r thja = 270 /w t t 0.01 0.1 1 10 100 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) 100us 1ms 10ms 100ms 1s dc t a =25 o c single pulse leshan radio company, ltd. rev .o 4/5 ln2312lt1g , s-ln2312lt1g
notes: 1. dimensioning and tolerancing per ansi y14.5m,1982 2. controlling dimension: inch. inches millimeters dim min max min max a 0.1102 0.1197 2.80 3.04 b 0.0472 0.0551 1.20 1.40 c 0.0350 0.0440 0.89 1.11 d 0.0150 0.0200 0.37 0.50 g 0.0701 0.0807 1.78 2.04 h 0.0005 0.0040 0.013 0.100 j 0.0034 0.0070 0.085 0.177 k 0.0140 0.0285 0.35 0.69 l 0.0350 0.0401 0.89 1.02 s 0.0830 0.1039 2.10 2.64 v 0.0177 0.0236 0.45 0.60 sot - 23 d j k l a c b s h g v 12 3 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 leshan radio company, ltd. rev .o 5/5 ln2312lt1g , s-ln2312lt1g
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